Factors Affecting Synthesis
Concentration of Graphite: The amount of Graphite used for the synthesis of Graphene Oxide (GO) is very important factor; because oxidation penetration on Graphite depends on the concentration of the Graphite in the Sulphuric Acid. Higher the concentration of Graphite, lesser the penetration of oxidation.
Concentration of Sulphuric Acid: Concentration of Sulphuric Acid is most important in Hummers method. Higher the concentration of Sulphuric Acid, higher the chances of complete exfoliation of Graphite into Graphene Oxide; But also very high chances of unwanted accident.
Rate of Adding Water: Rate at which water is added for the oxidation matters a lot. InstaNANO suggest you to add water drop wise very slowly to avoid unwanted accidents and to get good quality Graphene Oxide.
Effect of KMnO4: In this method, KMnO4 acts as Oxidizer, Sulphuric Acid functionalize the Graphite surface to add functional groups in the presence of reagent like KMnO4. KMnO4 should be added slowly because it increases the temperature of the reaction and may lead to incomplete oxidation at the end, if poured instantly and not stirred properly.
Role of Hydrogen Peroxide: Main role of Hydrogen Peroxide is to remove the excessive KMnO4 or in other words to stop the reaction.
Concentration of HCL: Hydrochloric Acid (HCL) is used in the washing process of Graphene Oxide (GO) because HCL can remove/dissolve any metal impurity during the synthesis of GO from Hummers method. By using concentrated HCL partial reduction of GO may be possible.
Centrifuge Time and Speed: Centrifuge time and speed (rpm) decide the amount of GO settle down in the centrifuge tube. At higher speed and more time washing, even smaller size GO can settle down in the centrifuge tube.
Number of Washing: How many times you wash is very important in this washing process. More times you wash the GO, leads to good quality GO with less impurities.